FDMC15N06 Overview
These N−Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
FDMC15N06 Key Features
- RDS(on) = 75 mW (Typ.) @ VGS = 10 V, ID = 15 A
- 100% Avalanche Tested
- These Device is Pb-Free and RoHS pliant
- 55 to +150
- VDS = 50 V, VGS = 0 V
- VDS = 45 V, TC = 150 °C
- On Characteristics
