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FDMC15N06 - N-Channel MOSFET

General Description

These N

innovative UItraFET process.

resistance per silicon area, resulting in outstanding performance.

Key Features

  • RDS(on) = 75 mW (Typ. ) @ VGS = 10 V, ID = 15 A.
  • 100% Avalanche Tested.
  • These Device is Pb.
  • Free and RoHS Compliant DATA SHEET www. onsemi. com WDFN8 3.3X3.3, 0.65P CASE 511DQ D5 D6 D7 D8 4G 3S 2S 1S.

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Datasheet Details

Part number FDMC15N06
Manufacturer onsemi
File Size 551.61 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC15N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, N-Channel, UltraFET 55 V, 15 A, 90 mW FDMC15N06 Description These N−Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery−operated products. Features • RDS(on) = 75 mW (Typ.